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 SKM 195GB126DN
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANSTM 2N Trench IGBT Module
SKM 195GB126DN SKM 195GAL126DN Preliminary Data
Inverse diode
Freewheeling diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Features
Typical Applications
Inverse diode
FWD
Thermal characteristics
Mechanical data GB GAL
1
14-06-2005 SEN
(c) by SEMIKRON
SKM 195GB126DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-06-2005 SEN
(c) by SEMIKRON
SKM 195GB126DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
(c) by SEMIKRON
SKM 195GB126DN
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
14-06-2005 SEN
(c) by SEMIKRON


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